Mid-Infrared Semiconductors on Silicon for Next-Generation Silicon Photonics
Galid R. Suwito, McGill University
Silicon photonics is a combination of two of the most important inventions of the 20th century: the silicon integrated circuit and the semiconductor laser. One major application is to enable faster data transfer over longer distance compared to traditional electronics using mid-infrared light, while utilizing the efficiencies of the well-established silicon technology. However, current silicon photonics still relies on a traditional chip bonding process to integrate mid- infrared photonic components into silicon platform. This laborious yet low yield process limits the flexibility of the larger-scale integration and makes the production cost very high. To overcome these, two routes have been pursued over the past decade: (1) exploring novel mid- infrared semiconductors which are nearly lattice-matched to Si; and (2) exploring novel integration technique to overcome large lattice-mismatch associated with growing more mature mid-infrared semiconductors on Si. The first part of the talk will discuss the demonstration of quantum-engineered structures based on novel mid-infrared semiconductor alloys, Ge1-x- ySixSny. Such structure has paved a way for realizing resonant tunneling diodes for mid-infrared applications. Then, at the second part, recent progresses on the metal-catalyzed lateral growth of Ge films directly on Si substrate will be reported. The fundamentals, promises, and challenges of this technique will be discussed.
Join the seminar on Zoom!
Meeting link: https://uwaterloo.zoom.us/j/91536560822?pwd=REVrcVdEY2pxN2lNVjhDOUxTaEJFUT09
Meeting ID: 915 3656 0822
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